(Singapore)
Product Summary
The IRFB3607PBF is a HEXFET Power MOSFET. The applications of the IRFB3607PBF include High Efficiency Synchronous Rectification in SMPS, Uninterruptible Power Supply, High Speed Power Switching, Hard Switched and High Frequency Circuits.
Parametrics
IRFB3607PBF absolute maximum ratings: (1)ID @ TC = 25℃, Continuous Drain Current, VGS @ 10V: 80 A; (2)ID @ TC = 100℃, Continuous Drain Current, VGS @ 10V: 56 A; (3)Pulsed Drain Current: 310 A; (4)PD @TC = 25℃, Maximum Power Dissipation: 140 W; (5)Linear Derating Factor: 0.96 W/℃; (6)Gate-to-Source Voltage: 20 V; (7)Peak Diode Recovery: 27 V/ns; (8)Operating Junction and Storage Temperature Range: -55 to +175 ℃.
Features
IRFB3607PBF features: (1)Improved Gate, Avalanche and Dynamic dv/dt Ruggedness; (2)Fully Characterized Capacitance and Avalanche SOA; (3)Enhanced body diode dV/dt and dI/dt Capability.
Diagrams
| Image | Part No | Mfg | Description |  |
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 IRFB3607PBF |
International Rectifier |
MOSFET MOSFT 75V 80A 9.0mOhm 56nC Qg |
Data Sheet |
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IRFB3607PBF |
International Rectifier |
MOSFET MOSFT 75V 80A 9.0mOhm 56nC Qg |
Data Sheet |
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